Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

RS Stock No.: 284-900Brand: InfineonManufacturers Part No.: IPT65R040CFD7XTMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

4.587 OMR

4.587 OMR Each (ex VAT)

4.816 OMR

4.816 OMR Each (inc. VAT)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
Select packaging type

4.587 OMR

4.587 OMR Each (ex VAT)

4.816 OMR

4.816 OMR Each (inc. VAT)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit price
1 - 94.587 OMR
10 - 994.230 OMR
100 - 4993.982 OMR
500 - 9993.773 OMR
1000+3.470 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more