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STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7

RS Stock No.: 906-4680Brand: STMicroelectronicsManufacturers Part No.: STP100N6F7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

STripFET F7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

5.335 OMR

0.534 OMR Each (In a Pack of 10) (ex VAT)

5.602 OMR

0.561 OMR Each (In a Pack of 10) (inc. VAT)

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7
Select packaging type

5.335 OMR

0.534 OMR Each (In a Pack of 10) (ex VAT)

5.602 OMR

0.561 OMR Each (In a Pack of 10) (inc. VAT)

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

STripFET F7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more