Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
48.125 OMR
0.962 OMR Each (In a Tube of 50) (ex VAT)
50.531 OMR
1.010 OMR Each (In a Tube of 50) (inc. VAT)
50
48.125 OMR
0.962 OMR Each (In a Tube of 50) (ex VAT)
50.531 OMR
1.010 OMR Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.962 OMR | 48.125 OMR |
100 - 450 | 0.748 OMR | 37.400 OMR |
500 - 950 | 0.638 OMR | 31.900 OMR |
1000 - 4950 | 0.534 OMR | 26.675 OMR |
5000+ | 0.517 OMR | 25.850 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details