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STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin TO-220 STP16NF06

RS Stock No.: 486-2206Brand: STMicroelectronicsManufacturers Part No.: STP16NF06
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

Morocco

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

3.806 OMR

0.761 OMR Each (In a Pack of 5) (ex VAT)

3.996 OMR

0.799 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin TO-220 STP16NF06
Select packaging type

3.806 OMR

0.761 OMR Each (In a Pack of 5) (ex VAT)

3.996 OMR

0.799 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin TO-220 STP16NF06
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 50.761 OMR3.806 OMR
10 - 200.677 OMR3.386 OMR
25 - 950.646 OMR3.229 OMR
100 - 4950.483 OMR2.415 OMR
500+0.415 OMR2.074 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

Morocco

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in