Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
3.795 OMR
0.759 OMR Each (In a Pack of 5) (ex VAT)
3.985 OMR
0.797 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.795 OMR
0.759 OMR Each (In a Pack of 5) (ex VAT)
3.985 OMR
0.797 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | 0.759 OMR | 3.795 OMR |
10 - 95 | 0.638 OMR | 3.190 OMR |
100 - 495 | 0.500 OMR | 2.502 OMR |
500 - 995 | 0.424 OMR | 2.118 OMR |
1000+ | 0.363 OMR | 1.815 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details