Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Country of Origin
Japan
4.730 OMR
0.473 OMR Each (In a Pack of 10) (ex VAT)
4.966 OMR
0.497 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.730 OMR
0.473 OMR Each (In a Pack of 10) (ex VAT)
4.966 OMR
0.497 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.473 OMR | 4.730 OMR |
50 - 90 | 0.429 OMR | 4.290 OMR |
100 - 990 | 0.330 OMR | 3.300 OMR |
1000+ | 0.209 OMR | 2.090 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Country of Origin
Japan