Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
1.760 OMR
0.352 OMR Each (In a Pack of 5) (ex VAT)
1.848 OMR
0.370 OMR Each (In a Pack of 5) (inc. VAT)
5
1.760 OMR
0.352 OMR Each (In a Pack of 5) (ex VAT)
1.848 OMR
0.370 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.352 OMR | 1.760 OMR |
50 - 95 | 0.226 OMR | 1.128 OMR |
100 - 195 | 0.226 OMR | 1.128 OMR |
200 - 395 | 0.226 OMR | 1.128 OMR |
400+ | 0.220 OMR | 1.100 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details