Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
2.778 OMR
0.556 OMR Each (In a Pack of 5) (ex VAT)
2.917 OMR
0.584 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.778 OMR
0.556 OMR Each (In a Pack of 5) (ex VAT)
2.917 OMR
0.584 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.556 OMR | 2.778 OMR |
50 - 120 | 0.506 OMR | 2.530 OMR |
125 - 245 | 0.478 OMR | 2.392 OMR |
250 - 495 | 0.446 OMR | 2.228 OMR |
500+ | 0.418 OMR | 2.090 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details