Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)

RS Stock No.: 695-5921Brand: ToshibaManufacturers Part No.: TK50P04M1(T6RSS-Q)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 5 V, 38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

1.348 OMR

0.270 OMR Each (In a Pack of 5) (ex VAT)

1.415 OMR

0.283 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)

1.348 OMR

0.270 OMR Each (In a Pack of 5) (ex VAT)

1.415 OMR

0.283 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 450.270 OMR1.348 OMR
50 - 950.165 OMR0.825 OMR
100+0.160 OMR0.798 OMR

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 5 V, 38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more