Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
0.990 OMR
0.990 OMR Each (ex VAT)
1.040 OMR
1.040 OMR Each (inc. VAT)
Standard
1
0.990 OMR
0.990 OMR Each (ex VAT)
1.040 OMR
1.040 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price |
---|---|
1 - 9 | 0.990 OMR |
10 - 49 | 0.842 OMR |
50 - 99 | 0.798 OMR |
100 - 249 | 0.742 OMR |
250+ | 0.693 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details