Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
1.430 OMR
0.072 OMR Each (Supplied as a Tape) (ex VAT)
1.502 OMR
0.076 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
20
1.430 OMR
0.072 OMR Each (Supplied as a Tape) (ex VAT)
1.502 OMR
0.076 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tape |
---|---|---|
20 - 180 | 0.072 OMR | 1.430 OMR |
200 - 480 | 0.050 OMR | 0.990 OMR |
500 - 980 | 0.050 OMR | 0.990 OMR |
1000 - 1980 | 0.044 OMR | 0.880 OMR |
2000+ | 0.044 OMR | 0.880 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details