Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
4.455 OMR
0.446 OMR Each (In a Pack of 10) (ex VAT)
4.678 OMR
0.468 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.455 OMR
0.446 OMR Each (In a Pack of 10) (ex VAT)
4.678 OMR
0.468 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.446 OMR | 4.455 OMR |
100 - 240 | 0.336 OMR | 3.355 OMR |
250 - 490 | 0.280 OMR | 2.805 OMR |
500 - 990 | 0.253 OMR | 2.530 OMR |
1000+ | 0.242 OMR | 2.420 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details