Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
11.605 OMR
1.160 OMR Each (In a Pack of 10) (ex VAT)
12.185 OMR
1.218 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
11.605 OMR
1.160 OMR Each (In a Pack of 10) (ex VAT)
12.185 OMR
1.218 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 1.160 OMR | 11.605 OMR |
50 - 90 | 0.930 OMR | 9.295 OMR |
100 - 240 | 0.814 OMR | 8.140 OMR |
250 - 490 | 0.754 OMR | 7.535 OMR |
500+ | 0.627 OMR | 6.270 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details