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Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3

RS Stock No.: 708-5014Brand: VishayManufacturers Part No.: SUP57N20-33-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

10.148 OMR

2.030 OMR Each (In a Pack of 5) (ex VAT)

10.655 OMR

2.131 OMR Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Select packaging type

10.148 OMR

2.030 OMR Each (In a Pack of 5) (ex VAT)

10.655 OMR

2.131 OMR Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 202.030 OMR10.148 OMR
25 - 451.744 OMR8.718 OMR
50 - 1201.502 OMR7.508 OMR
125 - 2451.419 OMR7.095 OMR
250+1.232 OMR6.160 OMR

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more