Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 18.95mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
32.450 OMR
0.649 OMR Each (In a Tube of 50) (ex VAT)
34.072 OMR
0.681 OMR Each (In a Tube of 50) (inc. VAT)
50
32.450 OMR
0.649 OMR Each (In a Tube of 50) (ex VAT)
34.072 OMR
0.681 OMR Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.649 OMR | 32.450 OMR |
100 - 450 | 0.512 OMR | 25.575 OMR |
500 - 950 | 0.434 OMR | 21.725 OMR |
1000+ | 0.380 OMR | 18.975 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 18.95mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.