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STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4

RS Stock No.: 188-8527Brand: STMicroelectronicsManufacturers Part No.: STB80NF55-06T4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

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Stock information temporarily unavailable.

10.092 OMR

2.018 OMR Each (In a Pack of 5) (ex VAT)

10.597 OMR

2.119 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
Select packaging type

10.092 OMR

2.018 OMR Each (In a Pack of 5) (ex VAT)

10.597 OMR

2.119 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 202.018 OMR10.092 OMR
25 - 451.898 OMR9.488 OMR
50 - 1201.798 OMR8.992 OMR
125 - 2451.700 OMR8.498 OMR
250+1.634 OMR8.168 OMR

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more