Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
32.725 OMR
0.654 OMR Each (In a Tube of 50) (ex VAT)
34.361 OMR
0.687 OMR Each (In a Tube of 50) (inc. VAT)
50
32.725 OMR
0.654 OMR Each (In a Tube of 50) (ex VAT)
34.361 OMR
0.687 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.654 OMR | 32.725 OMR |
100 - 450 | 0.512 OMR | 25.575 OMR |
500 - 950 | 0.429 OMR | 21.450 OMR |
1000 - 4950 | 0.368 OMR | 18.425 OMR |
5000+ | 0.352 OMR | 17.600 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details