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Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

RS Stock No.: 125-0553Brand: ToshibaManufacturers Part No.: TK25A60X,S5X(M
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

5.885 OMR

1.177 OMR Each (In a Pack of 5) (ex VAT)

6.179 OMR

1.236 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

5

Available in multiples of 5
55.885 OMR
1011.770 OMR
1517.655 OMR
2023.540 OMR
2525.025 OMR
3030.030 OMR
3535.035 OMR
4040.040 OMR
4545.045 OMR
5046.200 OMR
5550.820 OMR
6055.440 OMR
6560.060 OMR
7064.680 OMR
7569.300 OMR

5.885 OMR

1.177 OMR Each (In a Pack of 5) (ex VAT)

6.179 OMR

1.236 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M
Stock information temporarily unavailable.

5

Available in multiples of 5
55.885 OMR
1011.770 OMR
1517.655 OMR
2023.540 OMR
2525.025 OMR
3030.030 OMR
3535.035 OMR
4040.040 OMR
4545.045 OMR
5046.200 OMR
5550.820 OMR
6055.440 OMR
6560.060 OMR
7064.680 OMR
7569.300 OMR

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 201.177 OMR5.885 OMR
25 - 451.001 OMR5.005 OMR
50+0.924 OMR4.620 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more