Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.386 OMR
0.677 OMR Each (In a Pack of 5) (ex VAT)
3.555 OMR
0.711 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.386 OMR
0.677 OMR Each (In a Pack of 5) (ex VAT)
3.555 OMR
0.711 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.677 OMR | 3.386 OMR |
50 - 120 | 0.583 OMR | 2.914 OMR |
125 - 245 | 0.556 OMR | 2.782 OMR |
250 - 495 | 0.530 OMR | 2.651 OMR |
500+ | 0.504 OMR | 2.520 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details