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Vishay N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF530PBF

RS Stock No.: 708-4730Brand: VishayManufacturers Part No.: IRF530PBFDistrelec Article No.: 17115240
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

3.386 OMR

0.677 OMR Each (In a Pack of 5) (ex VAT)

3.555 OMR

0.711 OMR Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF530PBF
Select packaging type

3.386 OMR

0.677 OMR Each (In a Pack of 5) (ex VAT)

3.555 OMR

0.711 OMR Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF530PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 450.677 OMR3.386 OMR
50 - 1200.583 OMR2.914 OMR
125 - 2450.556 OMR2.782 OMR
250 - 4950.530 OMR2.651 OMR
500+0.504 OMR2.520 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more