Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
29.150 OMR
1.166 OMR Each (In a Tube of 25) (ex VAT)
30.608 OMR
1.224 OMR Each (In a Tube of 25) (inc. VAT)
25
29.150 OMR
1.166 OMR Each (In a Tube of 25) (ex VAT)
30.608 OMR
1.224 OMR Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 25 | 1.166 OMR | 29.150 OMR |
| 50 - 100 | 1.144 OMR | 28.600 OMR |
| 125+ | 1.084 OMR | 27.088 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products