Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
6.160 OMR
0.308 OMR Each (In a Pack of 20) (ex VAT)
6.468 OMR
0.323 OMR Each (In a Pack of 20) (inc. VAT)
20
6.160 OMR
0.308 OMR Each (In a Pack of 20) (ex VAT)
6.468 OMR
0.323 OMR Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
20
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | 0.308 OMR | 6.160 OMR |
200 - 480 | 0.258 OMR | 5.170 OMR |
500 - 980 | 0.248 OMR | 4.950 OMR |
1000 - 1980 | 0.231 OMR | 4.620 OMR |
2000+ | 0.220 OMR | 4.400 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details