Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.170 OMR
0.258 OMR Each (In a Pack of 20) (ex VAT)
5.428 OMR
0.271 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
5.170 OMR
0.258 OMR Each (In a Pack of 20) (ex VAT)
5.428 OMR
0.271 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | 0.258 OMR | 5.170 OMR |
200 - 480 | 0.226 OMR | 4.510 OMR |
500 - 980 | 0.192 OMR | 3.850 OMR |
1000 - 1980 | 0.182 OMR | 3.630 OMR |
2000+ | 0.154 OMR | 3.080 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details