Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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2.415 OMR
0.483 OMR Each (In a Pack of 5) (ex VAT)
2.536 OMR
0.507 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.415 OMR
0.483 OMR Each (In a Pack of 5) (ex VAT)
2.536 OMR
0.507 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.483 OMR | 2.415 OMR |
| 50 - 120 | 0.425 OMR | 2.126 OMR |
| 125 - 245 | 0.404 OMR | 2.021 OMR |
| 250 - 495 | 0.373 OMR | 1.864 OMR |
| 500+ | 0.194 OMR | 0.971 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products