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Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 SPP11N80C3XKSA1

RS Stock No.: 753-3190Brand: InfineonManufacturers Part No.: SPP11N80C3XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ C3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

1.312 OMR

1.312 OMR Each (ex VAT)

1.378 OMR

1.378 OMR Each (inc. VAT)

Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 SPP11N80C3XKSA1
Select packaging type

1.312 OMR

1.312 OMR Each (ex VAT)

1.378 OMR

1.378 OMR Each (inc. VAT)

Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 SPP11N80C3XKSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
1 - 91.312 OMR
10 - 241.250 OMR
25 - 491.208 OMR
50 - 991.171 OMR
100+1.113 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ C3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more