Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
2.888 OMR
0.578 OMR Each (In a Pack of 5) (ex VAT)
3.032 OMR
0.607 OMR Each (In a Pack of 5) (inc. VAT)
5
2.888 OMR
0.578 OMR Each (In a Pack of 5) (ex VAT)
3.032 OMR
0.607 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.578 OMR | 2.888 OMR |
25 - 95 | 0.512 OMR | 2.558 OMR |
100 - 245 | 0.446 OMR | 2.228 OMR |
250 - 495 | 0.424 OMR | 2.118 OMR |
500+ | 0.402 OMR | 2.008 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details