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Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF

RS Stock No.: 178-0919Brand: VishayManufacturers Part No.: IRFD9014PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
P.O.A.Each (Supplied as a Tape) (ex VAT)
Stock information temporarily unavailable.

18.375 OMR

0.184 OMR Each (In a Tube of 100) (ex VAT)

19.294 OMR

0.193 OMR Each (In a Tube of 100) (inc. VAT)

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF

18.375 OMR

0.184 OMR Each (In a Tube of 100) (ex VAT)

19.294 OMR

0.193 OMR Each (In a Tube of 100) (inc. VAT)

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
100 - 1000.184 OMR18.375 OMR
200 - 4000.173 OMR17.325 OMR
500+0.158 OMR15.750 OMR

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
P.O.A.Each (Supplied as a Tape) (ex VAT)

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
P.O.A.Each (Supplied as a Tape) (ex VAT)