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Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

RS Stock No.: 262-5859Brand: InfineonManufacturers Part No.: IPB029N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

4.226 OMR

0.845 OMR Each (In a Pack of 5) (ex VAT)

4.437 OMR

0.887 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Select packaging type

4.226 OMR

0.845 OMR Each (In a Pack of 5) (ex VAT)

4.437 OMR

0.887 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 450.845 OMR4.226 OMR
50 - 1200.766 OMR3.832 OMR
125 - 2450.719 OMR3.596 OMR
250 - 4950.667 OMR3.334 OMR
500+0.625 OMR3.124 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more