Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1

RS Stock No.: 214-4366Brand: InfineonManufacturers Part No.: IPB120N08S403ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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15.812 OMR

3.162 OMR Each (In a Pack of 5) (ex VAT)

16.603 OMR

3.320 OMR Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1

15.812 OMR

3.162 OMR Each (In a Pack of 5) (ex VAT)

16.603 OMR

3.320 OMR Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 53.162 OMR15.812 OMR
10 - 202.849 OMR14.245 OMR
25 - 452.656 OMR13.282 OMR
50 - 1202.470 OMR12.348 OMR
125+2.326 OMR11.632 OMR

Ideate. Create. Collaborate

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design-spark
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  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more