Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
162.140 OMR
16.214 OMR Each (In a Tube of 10) (ex VAT)
170.247 OMR
17.025 OMR Each (In a Tube of 10) (inc. VAT)
10
162.140 OMR
16.214 OMR Each (In a Tube of 10) (ex VAT)
170.247 OMR
17.025 OMR Each (In a Tube of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | 16.214 OMR | 162.140 OMR |
50 - 90 | 15.482 OMR | 154.825 OMR |
100 - 190 | 13.651 OMR | 136.510 OMR |
200 - 490 | 12.744 OMR | 127.435 OMR |
500+ | 11.935 OMR | 119.350 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details