Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
1.568 OMR
0.314 OMR Each (In a Pack of 5) (ex VAT)
1.646 OMR
0.330 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
1.568 OMR
0.314 OMR Each (In a Pack of 5) (ex VAT)
1.646 OMR
0.330 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | 0.314 OMR | 1.568 OMR |
10 - 95 | 0.264 OMR | 1.320 OMR |
100 - 495 | 0.226 OMR | 1.128 OMR |
500 - 995 | 0.226 OMR | 1.128 OMR |
1000+ | 0.220 OMR | 1.100 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details