Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
2.590 OMR
2.590 OMR Each (ex VAT)
2.720 OMR
2.720 OMR Each (inc. VAT)
Standard
1
2.590 OMR
2.590 OMR Each (ex VAT)
2.720 OMR
2.720 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | 2.590 OMR |
10 - 24 | 2.343 OMR |
25 - 99 | 2.211 OMR |
100 - 499 | 1.788 OMR |
500+ | 1.617 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details