Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
67.815 OMR
2.260 OMR Each (In a Tube of 30) (ex VAT)
71.206 OMR
2.373 OMR Each (In a Tube of 30) (inc. VAT)
30
67.815 OMR
2.260 OMR Each (In a Tube of 30) (ex VAT)
71.206 OMR
2.373 OMR Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | 2.260 OMR | 67.815 OMR |
60+ | 2.150 OMR | 64.515 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Height
20.15mm
Product details