Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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165.000 OMR
0.055 OMR Each (On a Reel of 3000) (ex VAT)
173.250 OMR
0.058 OMR Each (On a Reel of 3000) (inc. VAT)
3000
165.000 OMR
0.055 OMR Each (On a Reel of 3000) (ex VAT)
173.250 OMR
0.058 OMR Each (On a Reel of 3000) (inc. VAT)
3000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products