Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
163.185 OMR
5.440 OMR Each (In a Tube of 30) (ex VAT)
171.344 OMR
5.712 OMR Each (In a Tube of 30) (inc. VAT)
30
163.185 OMR
5.440 OMR Each (In a Tube of 30) (ex VAT)
171.344 OMR
5.712 OMR Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | 5.440 OMR | 163.185 OMR |
| 150 - 270 | 4.895 OMR | 146.850 OMR |
| 300+ | 4.604 OMR | 138.105 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products