Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
4.384 OMR
0.877 OMR Each (In a Pack of 5) (ex VAT)
4.603 OMR
0.921 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.384 OMR
0.877 OMR Each (In a Pack of 5) (ex VAT)
4.603 OMR
0.921 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.877 OMR | 4.384 OMR |
50 - 120 | 0.746 OMR | 3.728 OMR |
125 - 245 | 0.704 OMR | 3.518 OMR |
250 - 495 | 0.662 OMR | 3.308 OMR |
500+ | 0.625 OMR | 3.124 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details