Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
6.710 OMR
0.671 OMR Each (In a Pack of 10) (ex VAT)
7.046 OMR
0.705 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
6.710 OMR
0.671 OMR Each (In a Pack of 10) (ex VAT)
7.046 OMR
0.705 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.671 OMR | 6.710 OMR |
50 - 90 | 0.632 OMR | 6.325 OMR |
100 - 240 | 0.572 OMR | 5.720 OMR |
250 - 490 | 0.539 OMR | 5.390 OMR |
500+ | 0.506 OMR | 5.060 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details