Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.280 OMR
0.528 OMR Each (In a Pack of 10) (ex VAT)
5.544 OMR
0.554 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.280 OMR
0.528 OMR Each (In a Pack of 10) (ex VAT)
5.544 OMR
0.554 OMR Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.528 OMR | 5.280 OMR |
100 - 240 | 0.424 OMR | 4.235 OMR |
250 - 490 | 0.330 OMR | 3.300 OMR |
500 - 990 | 0.292 OMR | 2.915 OMR |
1000+ | 0.248 OMR | 2.475 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details