Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3

RS Stock No.: 228-2933Brand: VishayManufacturers Part No.: SiSS54DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

185.6 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00106 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

4.345 OMR

0.869 OMR Each (In a Pack of 5) (ex VAT)

4.562 OMR

0.912 OMR Each (In a Pack of 5) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3
Select packaging type

4.345 OMR

0.869 OMR Each (In a Pack of 5) (ex VAT)

4.562 OMR

0.912 OMR Each (In a Pack of 5) (inc. VAT)

Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 450.869 OMR4.345 OMR
50 - 1200.786 OMR3.932 OMR
125 - 2450.627 OMR3.135 OMR
250 - 4950.566 OMR2.832 OMR
500+0.473 OMR2.365 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

185.6 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00106 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more