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N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1

RS Stock No.: 906-4353PBrand: InfineonManufacturers Part No.: IPB010N06NATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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3.195 OMR

Each (Supplied on a Reel) (ex VAT)

3.355 OMR

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
Select packaging type

3.195 OMR

Each (Supplied on a Reel) (ex VAT)

3.355 OMR

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
2 - 183.195 OMR6.390 OMR
20 - 982.725 OMR5.450 OMR
100 - 1982.360 OMR4.720 OMR
200 - 4982.240 OMR4.480 OMR
500+2.030 OMR4.060 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more