Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
0.190 OMR
Each (On a Reel of 2000) (ex VAT)
0.200 OMR
Each (On a Reel of 2000) (inc VAT)
2000
0.190 OMR
Each (On a Reel of 2000) (ex VAT)
0.200 OMR
Each (On a Reel of 2000) (inc VAT)
2000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
China