N-Channel MOSFET Transistor, 56 A, 230 V, 3-Pin TO-220AB International Rectifier IRFB4233PBF
Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
230 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
370 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.66mm
Width
4.82mm
Series
HEXFET
Height
9.02mm
Minimum Operating Temperature
-40 °C
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P.O.A.
1
P.O.A.
1
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Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
230 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
370 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.66mm
Width
4.82mm
Series
HEXFET
Height
9.02mm
Minimum Operating Temperature
-40 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products