Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.85mm
Forward Diode Voltage
1.8V
Product details
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads
MOSFET Transistors, Microchip
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1.210 OMR
Each (In a Pack of 5) (ex VAT)
1.270 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
1.210 OMR
Each (In a Pack of 5) (ex VAT)
1.270 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.85mm
Forward Diode Voltage
1.8V
Product details
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads