Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.795 OMR
Each (In a Pack of 2) (ex VAT)
2.935 OMR
Each (In a Pack of 2) (inc VAT)
Standard
2
2.795 OMR
Each (In a Pack of 2) (ex VAT)
2.935 OMR
Each (In a Pack of 2) (inc VAT)
Standard
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | 2.795 OMR | 5.590 OMR |
10 - 98 | 2.375 OMR | 4.750 OMR |
100 - 248 | 1.900 OMR | 3.800 OMR |
250 - 498 | 1.795 OMR | 3.590 OMR |
500+ | 1.700 OMR | 3.400 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.