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N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

RS Stock No.: 171-3620Brand: Taiwan SemiconductorManufacturers Part No.: TSM3N80CH C5G
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Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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1.125 OMR

Each (On a Reel of 1875) (ex VAT)

1.181 OMR

Each (On a Reel of 1875) (inc. VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

1875

Available in multiples of 1875
18752,109.375 OMR
37504,218.750 OMR
56256,328.125 OMR
75008,437.500 OMR
937510,546.875 OMR
1125012,656.250 OMR
1312514,765.625 OMR
1500016,875.000 OMR
1687518,984.375 OMR
1875021,093.750 OMR
2062523,203.125 OMR
2250025,312.500 OMR
2437527,421.875 OMR
2625029,531.250 OMR
2812531,640.625 OMR

1.125 OMR

Each (On a Reel of 1875) (ex VAT)

1.181 OMR

Each (On a Reel of 1875) (inc. VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
Stock information temporarily unavailable.

1875

Available in multiples of 1875
18752,109.375 OMR
37504,218.750 OMR
56256,328.125 OMR
75008,437.500 OMR
937510,546.875 OMR
1125012,656.250 OMR
1312514,765.625 OMR
1500016,875.000 OMR
1687518,984.375 OMR
1875021,093.750 OMR
2062523,203.125 OMR
2250025,312.500 OMR
2437527,421.875 OMR
2625029,531.250 OMR
2812531,640.625 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more