Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
4.235 OMR
0.847 OMR Each (In a Pack of 5) (ex VAT)
4.447 OMR
0.889 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.235 OMR
0.847 OMR Each (In a Pack of 5) (ex VAT)
4.447 OMR
0.889 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.847 OMR | 4.235 OMR |
25 - 45 | 0.808 OMR | 4.042 OMR |
50 - 120 | 0.726 OMR | 3.630 OMR |
125 - 245 | 0.649 OMR | 3.245 OMR |
250+ | 0.622 OMR | 3.108 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details