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Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A

RS Stock No.: 827-4886Brand: Texas InstrumentsManufacturers Part No.: CSD18531Q5A
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

134 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

4.235 OMR

0.847 OMR Each (In a Pack of 5) (ex VAT)

4.447 OMR

0.889 OMR Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A
Select packaging type

4.235 OMR

0.847 OMR Each (In a Pack of 5) (ex VAT)

4.447 OMR

0.889 OMR Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 200.847 OMR4.235 OMR
25 - 450.808 OMR4.042 OMR
50 - 1200.726 OMR3.630 OMR
125 - 2450.649 OMR3.245 OMR
250+0.622 OMR3.108 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

134 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more