N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
NexFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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2.115 OMR
Each (ex VAT)
2.221 OMR
Each (inc VAT)
1
2.115 OMR
Each (ex VAT)
2.221 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | 2.115 OMR |
10 - 49 | 1.830 OMR |
50 - 249 | 1.600 OMR |
250 - 499 | 1.330 OMR |
500+ | 1.210 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
NexFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details