Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
0.560 OMR
Each (In a Tube of 50) (ex VAT)
0.588 OMR
Each (In a Tube of 50) (inc. VAT)
50
0.560 OMR
Each (In a Tube of 50) (ex VAT)
0.588 OMR
Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.560 OMR | 28.000 OMR |
100 - 200 | 0.540 OMR | 27.000 OMR |
250+ | 0.525 OMR | 26.250 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details