Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
64.515 OMR
2.150 OMR Each (In a Pack of 30) (ex VAT)
67.741 OMR
2.258 OMR Each (In a Pack of 30) (inc. VAT)
Standard
30
64.515 OMR
2.150 OMR Each (In a Pack of 30) (ex VAT)
67.741 OMR
2.258 OMR Each (In a Pack of 30) (inc. VAT)
Stock information temporarily unavailable.
Standard
30
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
30 - 30 | 2.150 OMR | 64.515 OMR |
60 - 120 | 2.140 OMR | 64.185 OMR |
150 - 270 | 2.057 OMR | 61.710 OMR |
300 - 570 | 2.024 OMR | 60.720 OMR |
600+ | 2.002 OMR | 60.060 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details