Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
5.390 OMR
0.539 OMR Each (In a Pack of 10) (ex VAT)
5.660 OMR
0.566 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.390 OMR
0.539 OMR Each (In a Pack of 10) (ex VAT)
5.660 OMR
0.566 OMR Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.539 OMR | 5.390 OMR |
100 - 490 | 0.418 OMR | 4.180 OMR |
500 - 990 | 0.358 OMR | 3.575 OMR |
1000+ | 0.308 OMR | 3.080 OMR |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China