Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS Stock No.: 253-3509PBrand: BournsManufacturers Part No.: BIDW50N65T
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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

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2.205 OMR

Each (Supplied in a Tube) (ex VAT)

2.315 OMR

Each (Supplied in a Tube) (inc VAT)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Select packaging type

2.205 OMR

Each (Supplied in a Tube) (ex VAT)

2.315 OMR

Each (Supplied in a Tube) (inc VAT)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tube
2 - 82.205 OMR4.410 OMR
10 - 481.980 OMR3.960 OMR
50 - 981.870 OMR3.740 OMR
100 - 2481.625 OMR3.250 OMR
250+1.620 OMR3.240 OMR

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more